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| Year of Publication |
2011
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| Journal |
Journal of Applied Physics
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| Volume |
109
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| Number of Pages |
023109
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| Download citation |
Publications
Ab initio study of the bandgap engineering of Al 1- x Ga x N for optoelectronic applications
Professor of Physics
Citation: 1.Ab initio study of the bandgap engineering of Al 1- x Ga x N for optoelectronic applications. Journal of Applied Physics. 2011;109:023109.
In: Journal of Applied Physics
Published by: AIP , 2011
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Cited by: