2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films

ahendaoui, 973, Journal Article, , Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films. (2013). Applied Physics Letters 102 (6), 061107, 2013.

2013

Synthesis and characterization of the in situ bulk polymerization of PMMA containing graphene sheets using microwave irradiation

ealsharaeh, 237, Journal Article, , Synthesis and characterization of the in situ bulk polymerization of PMMA containing graphene sheets using microwave irradiation. (2013). Molecules, 18, 3152–3167.

2013

Stepwise Association of Hydrogen Cyanide and Acetonitrile with the Benzene Radical Cation: Structures and Binding Energies of (C6H6•+)(HCN) n, n= 1–6, and (C6H6•+)(CH3CN) n, n …

asoliman, 266, Journal Article, , Stepwise Association of Hydrogen Cyanide and Acetonitrile with the Benzene Radical Cation: Structures and Binding Energies of (C6H6•+)(HCN) n, n= 1–6, and (C6H6•+)(CH3CN) n, n … (2013). The Journal of Physical Chemistry A 117 (6), 1069-1078, 2013.

2013

A uniqueness result for an inverse problem in a space-time fractional diffusion equation

statar, 649, Journal Article, , A uniqueness result for an inverse problem in a space-time fractional diffusion equation. (2013). Electron. J. Differ. Equ 257, 1-9, 2013.

2013

The origin of magnetism in transition metal-doped ZrO2 thin films: experiment and theory

sosaid, 650, Journal Article, , The origin of magnetism in transition metal-doped ZrO2 thin films: experiment and theory. (2013). Journal of Physics: Condensed Matter 25 (43), 436003, 2013, 25, 436003.