2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

X-ray absorption near edge structure investigation of iron–sodium silicate glasses

mkariapper, 278, Journal Article, , X-ray absorption near edge structure investigation of iron–sodium silicate glasses. (2011). Journal of Non-Crystalline Solids, 357, 3803–3806.

2011

Cr-Doped III–V nitrides: potential candidates for spintronics

sosaid, 650, Journal Article, , Cr-Doped III–V nitrides: potential candidates for spintronics. (2011). Journal of Electronic Materials 40 (6), 1428-1436, 2011, 40, 1428–1436.

2011

Ab initio investigation on the magnetic ordering in Gd doped ZnO

sosaid, 650, Journal Article, , Ab initio investigation on the magnetic ordering in Gd doped ZnO. (2011). Journal of Applied Physics 109 (8), 083929, 2011, 109, 083929.